True chip-scale packaging is available from International Rectifier.Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits,combined with the ruggedized device design that International Rectifier is well known for, provide the designer with an extremely efficient and reliable device.
The FlipFETTM package, is one-fifth the footprint of a comparable TSSOP-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFETTM the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, mobile phones and PCMCIA cards.
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Ultra Low RSS(on) per Footprint AreaLow Thermal ResistanceBi-Directional N-Channel SwitchSuper Low Profile (<.8mm)Available Tested on Tape & ReelESD Protection Diode
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Parameter |
Max. |
Units |
| VSS |
Source-to-Source Voltage |
20 |
V |
| IS @ TA = 25°C |
Continuous Current, VGS1 = VGS2 = 4.5V |
±6.5 |
A |
| IS @ TA = 70°C |
Continuous Current, VGS1 = VGS2 = 4.5V |
±5.2 |
| ISM |
Pulsed Current |
33 |
| PD @TA = 25°C |
Power Dissipation |
2.5 |
W |
| PD @TA = 70°C |
Power Dissipation |
1.6 |
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Linear Derating Factor |
20 |
mW/°C |
| VGS |
Gate-to-Source Voltage |
±12 |
V |
TJ
TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
Post a Buying Lead
Required Field 
